Schottky diode 30GWJ2C42C datasheet - Toshiba

optimized for landscape orientated mobiles

30GWJ2C42C

si schottky diode

Tos/12-16D1A
Umax:
40V
Imax:
30A
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<0.55V/15A
the 30GWJ2C42C is a silicon schottky barrier diode, U = 40V, I = 30A, applications: SMPS, dual-diode
OEM: Toshiba Tokyo Shibaura Electri..
Package
12-16D1A
datasheet -
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