|
FGH40N60SMDF
N-IGBT
|
|
UCE
|
600V
|
|
UGE
|
±20V
|
IC
|
40A
|
Ptot
|
174W
|
TON/TOFF
|
12/97nS
|
TJ
|
175°C
|
el FGH40N60SMDF es un transistor de silicio N-IGBT, Uce = 600V, Ic = 40A, d´application: uso en aplicaciones de energía |
Source: | datasheet ON Semiconductor |
Package: |
TO-247 |
|
FGH40N60SMDF
N-IGBT
|
|
UCE
|
600V
|
|
UGE
|
±20V
|
IC
|
40A
|
Ptot
|
174W
|
TON/TOFF
|
12/97nS
|
TJ
|
175°C
|
el FGH40N60SMDF es un transistor de silicio N-IGBT, Uce = 600V, Ic = 40A, d´application: uso en aplicaciones de energía |
Source: | datasheet ON Semiconductor |
Package: |
TO-247 |
|
|
|