|
GT20D101
SI N-IGBT transistor
|
|
UCE
|
250V
|
|
UGE
|
20V
|
IC
|
20A
|
Ptot
|
180W
|
TON/TOFF
|
--
|
TJ
|
-
|
le GT20D101 c´est transistor silicium N-IGBT , Uce = 250V, Ic = 20A, d´application: Niveaux de performance |
Source: | Jaeger electronic catalog 1999 |
Package: |
- |
|
GT20D101
SI N-IGBT transistor
|
|
UCE
|
250V
|
|
UGE
|
20V
|
IC
|
20A
|
Ptot
|
180W
|
TON/TOFF
|
--
|
TJ
|
-
|
le GT20D101 c´est transistor silicium N-IGBT , Uce = 250V, Ic = 20A, d´application: Niveaux de performance |
Source: | Jaeger electronic catalog 1999 |
Package: |
- |
|
|
|