|
|
|
IGW40T120
SI N-IGBT transistor
|
|
|
UCE
|
1200V
|
|
|
UGE
|
±20V
|
|
IC DC/AC
|
40/105A
|
|
Ptot
|
270W
|
|
TON/TOFF
|
48/480nS
|
|
TJ
|
150°C
|
the IGW40T120 is a silicon IGBT transistor preferred for use in power applications
marking code: G40T120 |
| Source: | datasheet Infineon technologie... |
|
Package: |
TO-247 |
|
|
IGW40T120
SI N-IGBT transistor
|
|
|
UCE
|
1200V
|
|
|
UGE
|
±20V
|
|
IC DC/AC
|
40/105A
|
|
Ptot
|
270W
|
|
TON/TOFF
|
48/480nS
|
|
TJ
|
150°C
|
the IGW40T120 is a silicon IGBT transistor preferred for use in power applications
marking code: G40T120 |
| Source: | datasheet Infineon technologie... |
|
Package: |
TO-247 |
|
|
|
