|
|
|
IHW30N160R2
SI N-IGBT transistor
|
|
|
UCE
|
1600V
|
|
|
UGE
|
±20V
|
|
IC DC/AC
|
30/90A
|
|
Ptot
|
312W
|
|
Time
|
525nS
|
|
TJ
|
175°C
|
the IHW30N160R2 is a silicon IGBT transistor preferred for use in power applications
marking code: H30R1602 |
| Source: | datasheet Infineon technologie... |
|
Package: |
TO-247 |
|
|
IHW30N160R2
SI N-IGBT transistor
|
|
|
UCE
|
1600V
|
|
|
UGE
|
±20V
|
|
IC DC/AC
|
30/90A
|
|
Ptot
|
312W
|
|
Time
|
525nS
|
|
TJ
|
175°C
|
the IHW30N160R2 is a silicon IGBT transistor preferred for use in power applications
marking code: H30R1602 |
| Source: | datasheet Infineon technologie... |
|
Package: |
TO-247 |
|
|
|
