|
IHW30N160R2
SI N-IGBT transistor
|
|
UCE
|
1600V
|
|
UGE
|
±20V
|
IC DC/AC
|
30/90A
|
Ptot
|
312W
|
Time
|
525nS
|
TJ
|
175°C
|
le IHW30N160R2 c´est transistor silicium N-IGBT , Uce = 1.6kV, Ic = 30A, d´application: Niveaux de performance marking code: H30R1602 |
Source: | datasheet Infineon technologie... |
Package: |
TO-247 |
|
IHW30N160R2
SI N-IGBT transistor
|
|
UCE
|
1600V
|
|
UGE
|
±20V
|
IC DC/AC
|
30/90A
|
Ptot
|
312W
|
Time
|
525nS
|
TJ
|
175°C
|
le IHW30N160R2 c´est transistor silicium N-IGBT , Uce = 1.6kV, Ic = 30A, d´application: Niveaux de performance marking code: H30R1602 |
Source: | datasheet Infineon technologie... |
Package: |
TO-247 |
|
|
|