transistor LAE4001R datasheet - Philips Semic.

optimized for landscape orientated mobiles

LAE4001R

SI NPN transistor

SOT100
Uce/Ucb:
25/30V
Ic:
80mA
β
20-220
N:
480mW
F:
4GHz
Tmax:
200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up... [more]
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
OEM: Philips Semiconductors
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