|
|
|
BAX12
si diode
|
|
|
UR
|
90V
|
|
|
IF
|
400mA
|
|
- |
-
|
|
trr
|
50nS
|
|
-
|
-
|
|
TJ
|
200°C
|
|
the BAX12 is a fast planar epitaxial controlled avalanche diode, intended for switching inductive loads eg. in semi - electronic telephone exchanges |
| Fiche technique: | PDF |
|
Package: |
DO-35 |
|
|
BAX12
si diode
|
|
|
UR
|
90V
|
|
|
IF
|
400mA
|
|
- |
-
|
|
trr
|
50nS
|
|
-
|
-
|
|
TJ
|
200°C
|
|
the BAX12 is a fast planar epitaxial controlled avalanche diode, intended for switching inductive loads eg. in semi - electronic telephone exchanges |
| Fiche technique: | PDF |
|
Package: |
DO-35 |
|
|
|
