|
BD128
NPN
|
|
UCE/UCB
|
300/350V
|
|
IC
|
0.5A
|
hFE
|
30-50
|
Ptot
|
17.5W
|
TON/TOFF
|
--
|
TJ
|
150°C
|
el BD128 es un transistor de silicio NPN, Uce = 300V, Ic = 500mA, d´application: transistor de potencia, propósito general, alto voltaje |
datasheet: | PDF |
Package: |
TO-126 |
|
BD128
NPN
|
|
UCE/UCB
|
300/350V
|
|
IC
|
0.5A
|
hFE
|
30-50
|
Ptot
|
17.5W
|
TON/TOFF
|
--
|
TJ
|
150°C
|
el BD128 es un transistor de silicio NPN, Uce = 300V, Ic = 500mA, d´application: transistor de potencia, propósito general, alto voltaje |
datasheet: | PDF |
Package: |
TO-126 |
|
|
|