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BD649
SI NPN darlington transistor
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UCE/UCB
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100/100V
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|
IC DC/AC
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8/12A
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hFE
|
0.75-1.5k
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Ptot
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62.5W
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fT
|
7MHz
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|
TJ
|
150°C
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le BD649 c´est transistor silicium NPN darlington , Uce = 100V, Ic = 8A, d´application: transistor de puissance |
| Fiche technique: | PDF |
|
Package: |
TO-220 |
|
|
BD649
SI NPN darlington transistor
|
|
|
UCE/UCB
|
100/100V
|
|
|
IC DC/AC
|
8/12A
|
|
hFE
|
0.75-1.5k
|
|
Ptot
|
62.5W
|
|
fT
|
7MHz
|
|
TJ
|
150°C
|
|
le BD649 c´est transistor silicium NPN darlington , Uce = 100V, Ic = 8A, d´application: transistor de puissance |
| Fiche technique: | PDF |
|
Package: |
TO-220 |
|
|
|
