|
|
|
BDV64B
SI PNP darlington transistor
|
|
|
UCE/UCB
|
-100/-100V
|
|
|
IC
|
-10A
|
|
hFE
|
>1000
|
|
Ptot
|
125W
|
|
TON/TOFF
|
--
|
|
TJ
|
150°C
|
|
the BDV64B is a silicon power PNP darlington transistor designed for use as output device in complementary general purpose amplifier applications |
| Source: | datasheet Motorola Semiconduct... |
|
Package: |
TO-218 |
|
|
BDV64B
SI PNP darlington transistor
|
|
|
UCE/UCB
|
-100/-100V
|
|
|
IC
|
-10A
|
|
hFE
|
>1000
|
|
Ptot
|
125W
|
|
TON/TOFF
|
--
|
|
TJ
|
150°C
|
|
the BDV64B is a silicon power PNP darlington transistor designed for use as output device in complementary general purpose amplifier applications |
| Source: | datasheet Motorola Semiconduct... |
|
Package: |
TO-218 |
|
|
|
